Your daily dose of photovoltaic technology developments and solar news

• Popular Technical Papers

  • Overview of automation in the photovoltaic industry
  • Understanding moisture ingress and packaging requirements for photovoltaic modules
  • Evaluation of encapsulant materials for PV applications
  • Inline processing of crystalline silicon solar cells: the holy grail for large-scale manufacturing?
  • PV sector outlook: an analyst’s perspective

• Featured Technical Papers

  • Transparent conducting oxide deposition techniques for thin-film photovoltaics
  • Comprehensive and advanced quality assurance measures for optimal yields from PV power plants
  • Surface passivation of silicon solar cells using industrially relevant Al2O3 deposition techniques
  • Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiNx:H stacks
  • Integrated loops: a prerequisite for sustainable and environmentally-friendly polysilicon production

Formation of the pn-junction for charge carrier separation is one of the key processes of a modern high-volume solar cell production. In silicon wafer-based solar cell technology this is achieved by diffusion of phosphorus atoms in boron pre-doped wafers forming a sub-micron shallow n-type emitter in a 200μm-thick p-type base. In this contribution we discuss both the characteristics of emitter doping profiles and the diffusion process itself as required for optimal solar cell conversion efficiencies. In addition we give an overview on state-of-the-art industrial diffusion technologies and conclude with a brief outlook on their evolution.

Paper costs $15.00. It's FREE when you purchase a subscription.