Your daily dose of photovoltaic technology developments and solar news

• Popular Technical Papers

  • Overview of automation in the photovoltaic industry
  • Understanding moisture ingress and packaging requirements for photovoltaic modules
  • Evaluation of encapsulant materials for PV applications
  • Inline processing of crystalline silicon solar cells: the holy grail for large-scale manufacturing?
  • PV sector outlook: an analyst’s perspective

• Featured Technical Papers

  • Transparent conducting oxide deposition techniques for thin-film photovoltaics
  • Comprehensive and advanced quality assurance measures for optimal yields from PV power plants
  • Surface passivation of silicon solar cells using industrially relevant Al2O3 deposition techniques
  • Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiNx:H stacks
  • Integrated loops: a prerequisite for sustainable and environmentally-friendly polysilicon production

With the thin-film silicon industry facing the problems of high-quality material deposition at high rates and narrowing deposition process windows, the “no-drift regime” is an important part of this development. In the case of plasma-enhanced chemical vapor deposition (PECVD) of thin silicon films, the inconstancy of the concentration of silicon-containing particles (SCP) in the plasma leads to changes in deposition conditions, causing a deterioration of film properties, therefore decreasing the performance of the solar cells. During the last few decades, evidence about the process instabilities has been accumulated in different laboratories. In this study, Fourier transform infrared absorption spectroscopy (FTIR), optical emission spectroscopy (OES), self-bias voltage and plasma impedance controls were applied as in-situ process diagnostics during the deposition of amorphous and microcrystalline silicon thin-films. Results of the study were then discussed.

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