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In-line plasma-chemical etching of crystalline silicon wafers

Dorit Linaschke, Mattias Leistner, Gerrit Mäder, Wulf Grählert, Ines Dani & Stefan Kaskel, Fraunhofer IWS, Dresden, Germany

Thumb of Principle of atmospheric pressure plasma etching equipment and FT-IR measurement deviceThe etching technology currently used in the solar industry is mostly based on wet chemical processing. Plasmaenhanced dry chemical etching at atmospheric pressure is an alternative to the existing technology, especially when combined with similar process technologies, for example plasma-enhanced deposition techniques at atmospheric pressure, to provide a continuous in-line processing of crystalline silicon solar cells. This paper presents the use of plasma chemical etching using Fourier Transform infrared (FT-IR) spectroscopy to monitor different silicon wafer processing steps as an alternative to the widely used wet chemical processing approach.

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