Your daily dose of photovoltaic technology developments and solar news

• Popular Technical Papers

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• Featured Technical Papers

  • Transparent conducting oxide deposition techniques for thin-film photovoltaics
  • Comprehensive and advanced quality assurance measures for optimal yields from PV power plants
  • Surface passivation of silicon solar cells using industrially relevant Al2O3 deposition techniques
  • Influence of a-Si:H deposition temperature on thermal stability of a-Si:H/SiNx:H stacks
  • Integrated loops: a prerequisite for sustainable and environmentally-friendly polysilicon production

The next generation of industrial silicon solar cells aims at efficiencies of 20% and above. To achieve this goal using ever-thinner silicon wafers, a highly effective surface passivation of the cell, front and rear, is required. In the past, finding a suitable dielectric layer providing a high-quality rear passivation has been a major challenge. Aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) has only recently turned out to be a nearly perfect candidate for such a dielectric. However, conventional ALD is limited to deposition rates well below 2nm/min, which is incompatible with industrial solar cell production. This paper assesses the passivation quality provided by three different industrially relevant techniques for the deposition of Al2O3 layers, namely high-rate spatial ALD, plasma-enhanced chemical vapour deposition (PECVD) and reactive sputtering.

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